Hao Guodong, a researcher from Japan’s NICT, arouses keen interest with his presentation to the IMU’s School of Physical Science and Technology on Dec 29. [Photo/imu.edu.cn]

The high-tech world of modifications to semiconductors was under the spotlight during a presentation by a top researcher in Japan at Inner Mongolian University, IMU officials said.

The School of Physical Science and Technology at IMU in Hohhot, capital of North China’s Inner Mongolia autonomous region, invited Hao Guodong -- a researcher from Japan’s National Institute of Information and Communications Technology, or NICT -- to give his report on Dec 29, 2019.

Hao discussed a form of modifying semiconductors, called p-type doping. Doping is the process of adding impurities to semiconductors to give them different properties.

Interested in the topic of p-type doping problems with ultra-wide band gap nitride semiconductor materials, the report attracted the participation of over 50 IMU teachers, graduates and undergraduates.

In his report, Hao talked about the application prospects of short wavelength deep-UV light-emitting diodes -- or LEDs -- in many fields.

He pointed out that the wavelengths of deep-UV photoelectric devices became shorter and the band gap width of material energy levels increased -- and high efficiency p-type doping became extremely difficult -- which altered its efficiency and created power bottlenecks.

The researcher went on to analyze a series of problems and possible solutions brought by p-type doping.

After the report, IMU teachers and students discussed with Hao the manufacturing technology and theory of LEDs.